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EIC1213-8
ISSUED 3-19-09
12.75-13.25 GHz 8-Watt Internally Matched Power FET
Excelics
EIC1213-8
.827.010 .669
.120 MIN
FEATURES
* * * * * * * 12.75- 13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 28% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH
.024 .421
YYWW
SN
.120 MIN
.125 .508.008 .442 .168.010
ALL DIMENSIONS IN INCHES
.004 .063 .004 .105.008
ELECTRICAL CHARACTERISTICS (Ta = 25C)
Caution! ESD sensitive device. SYMBOL P1dB G1dB G IMD3 PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 12.75-13.25GHz VDS = 10 V, IDSQ 2200mA Gain at 1dB Compression f = 12.75-13.25GHz VDS = 10 V, IDSQ 2200mA Gain Flatness f = 12.75-13.25GHz VDS = 10 V, IDSQ 2200mA Output 3rd Order Intermodulation Distortion 2 f = 10 MHz 2-Tone Test; Pout = 28.0 dBm S.C.L VDS = 10 V, IDSQ 65% IDSS f = 13.25 GHz Power Added Efficiency at 1dB Compression f = 12.75-13.25GHz VDS = 10 V, IDSQ 2200mA Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance
3
MIN
38.5 5.5
TYP
39 6.5
MAX
UNITS
dBm dB
0.6 -41 -45 28 2200 3.8 -2.5 3.5 2600 4.6 -4.0 3.8
o
dB dBc % mA A V C/W
f = 12.75-13.25GHz
VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA
Note: 1) Tested with 50 Ohm gate resistor.
2) S.C.L. = Single Carrier Level. 1,2
3) Overall Rth depends on case mounting.
MAXIMUM RATING AT 25C
SYMBOLS
PARAMETERS Drain-Source Voltage Gate-Source Voltage Input Power Channel Temperature Storage Temperature Total Power Dissipation
ABSOLUTE1 15 -5 35dBm 175 oC -65 to +175 oC 39.5W
CONTINUOUS2 10V -4V @ 3dB Compression 175 oC -65 to +175 oC 39.5W
Vds Vgs Pin Tch Tstg Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2 Revision A1
EIC1213-8
ISSUED 3-19-09
12.75-13.25 GHz 8-Watt Internally Matched Power FET
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
Excelics
EIC1213-8
YYWW SN
DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2 Revision A1

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